# Memristors and Nanowires

Check out this excellent short video about neuromorphic processing using silver nanowires and memristor technology.

“*The human brain is neurologically advanced and exploits connectivity that is controlled by electrical and chemical signals. My research will create nanowire networks that have the potential to mimic aspects of the neurological functions of the human brain, which may revolutionize the performance of current day computers. It could be truly ground-breaking*.” – Dr. John Boland

HT Philippe Van Nedervelde

### Want to learn more?

MoNETA: A Mind Made from Memristors

Andy Thomas, ‘Memristor-based neural networks’, Journal of Physics D: Applied Physics,http://dx.doi.org/10.1088/0022-3727/46/9/093001, released online on 5 February 2013, published in print on 6 March 2013.

http://www.neurdon.com/tag/memristors/

So-called non-volatile memristors/memristive systems are conceptually defined by a unique set of characteristic mathematical state equations – based on the mathematical framework proposed by L. O. Chua and S. M. Kang (Proc. IEEE 64, (1976) 209–223). Thus, a solid state memory device should only be labeled “memristor” if one is able to propose a reasonable physical model that satisfies these state equations. This, however, seems to be impossible. The hypothetical mathematical state equations postulated for such systems will probably find no physical equivalent because they are by themselves – when interpreted physically – in severe conflict with fundamentals of non-equilibrium thermodynamics.

Non-volatile information storage without energy barriers that separate distinct memory states from each other is impossible. Some finite amount of electrical work is always required to bring about transitions from one memory state to another. Non-volatile internal states of any solid state device can thus only be changed if an appropriate amount of electrical power can be fed into the device at a given moment. It can therefore be ruled out that memory devices exist in physical reality where transitions between internal states are solely controlled by either the electric current or voltage.

Hi, I have a question, have been experimental demostration that proves that the HP memristors could do what they say can do?

The articles refer to the TiO2 memristor from HP, there are several different kinds that do not violate the laws of physics as you claim.

Ion doped PEO (Li+ typically) in a layer of PANI displays pinched hysteresis during a I-V sweep. One study used Rb+ doped PEO to measure ion concentration with x-ray spectroscopy to prove that ion concentration changed with the voltage sweep which lead to resistance chance in the device.

It’s a real mystery that part of the scientific community still believes in the memristor. The so-called “fourth fundamental circuit element” – referred to as the “memristor” – cannot exist in physical reality. In principle, no physical model can be proposed which would satisfy the mathematical concept of genuine non-volatile memristors/memristive systems. When analyzed under physical aspects, the hypothetical mathematical state equations defining non-volatile memristors are by themselves in severe conflict with fundamentals of physics as discussed in “Fundamental Issues and Problems in the Realization of Memristors” by P. Meuffels and R. Soni (http://arxiv.org/abs/1207.7319) and “On the physical properties of memristive, memcapacitive, and meminductive systems” by M. Di Ventra and Y. V. Pershin (http://arxiv.org/abs/1302.7063).